В свободном доступе декабрьский выпуск журнала Materials Today, посвященный материалам для электроники, в частности, для запонимающих устройств и компьютерной памяти:
Lead story
Memory materials: a unifying description Massimiliano Di Ventra and Yuriy V. Pershin
Di Ventra and Pershin show that the majority of two-terminal electronic devices based on memory materials and systems behave simply as, or as a combination of, memristors,
memcapacitors, and meminductors. This unifying description opens up new venues for digital and analog applications ranging from information storage to biologically-inspired circuits.
Reviews
Organic ferroelectric opto - electronic memories Kamal Asadi, Mengyuan Li, Paul W. M. Blom, Martijn Kemerink, and Dago M. de Leeuw
Memory is a prerequisite for many electronic devices. Organic non-volatile memory devices based on ferroelectricity are a promising approach towards the development of a low-cost
memory technology based on a simple cross-bar array. In this review, de Leeuw et al. discuss the latest developments in this area with a focus on bistable rectifying diodes.
Phase change materials and non - volatile storage Daniele Ielmini and Andrea L. Lacaita
The success of phase change materials in electronic storage is mostly due to the unique properties of the amorphous state where carrier transport phenomena and thermally-induced phase change cooperate to make high-speed, low-voltage operation and stable data retention possible within the same material. Ielmini and Lacaita discuss the key physical properties that make this phase so special and the future perspectives of phase-change memory devices.
Developments in nanocrystal memory Ting-Chang Chang, Fu-Yen Jian, Shih-Cheng Chen, and Yu-Ting Tsai
Traditional flash memory is expected to reach its physical limit as the dimensions are scaled down. In order to solve this problem, discrete nanocrystal memory has been proposed as a promising candidate for the next generation of nonvolatile memory due to its high operation speed, good scalability, and superior reliability. Chang et al. review the
current status of research in nanocrystal memory.
